論文

We report formation and optical properties of site-controlled, multi-stack InGaAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InGaAs/GaAs QDs are realized in GaAs NWs grown on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures and identi.ed by structural analyses and photoluminescence characterization. Optical characterization at 10 K corroborates formation of high-quality, multi-stack InGaAs/GaAs QD-in-NWs up to 50-stack without degradation of PL intensities. In addition, light emission at room temperature from multi-stack InGaAs/GaAs QDs embedded in GaAs NWs is realized. These results would enable the realization of high-performance IBSCs based on site-controlled QD-in-NWs utilizing existing, well-established NW growth technologies on a GaAs platform. © 2012 Elsevier B.V. All rights reserved.

Optical rotation is experimentally demonstrated in a semiconductor-based three-dimensional chiral photonic crystal (PhC) at a telecommunication wavelength. We design a rotationally-stacked woodpile PhC structure, where neighboring layers are rotated by 45° and four layers construct a single helical unit. The mirror-asymmetric PhC made from GaAs with sub-micron periodicity is fabricated by a micro-manipulation technique. The linearly polarized light incident on the structure undergoes optical rotation during transmission. The obtained results show good agreement with numerical simulations. The measurement demonstrates the largest optical rotation angle as large as ~ 23° at 1.3 μm wavelength for a single helical unit. © 2013 Optical Society of America.

We present the growth of InAs quantum dots (QD) embedded in GaAs nanowires (NW) on silicon and demonstrate clear single photon emission. Sharp excitonic emission (linewidth of 162 μeV) and the generation of single photons (g(2)(0) = 0.18) was observed by low temperature photoluminescence measurements, suggesting a high optical quality which can be attributed to the high crystal quality of the QD structure. It is believed that the crystal quality is high due to the Stranski-Krastanov (S-K) mode of the growth. This structure may open new ways for the integration of such photon emitters into future 'on-silicon' quantum optical circuits. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

We report on newly-designed H1-type photonic crystal (PhC) nanocavities that simultaneously exhibit high Q factors, small mode volumes, and high external coupling efficiencies (η) of light radiated above the PhC membrane. Dipole modes of the H1 PhC nanocavities, which are doubly-degenerate and orthogonally-polarized in theory, are investigated both by numerical calculations and experiments. Through modifying the sizes and positions of the air-holes near to the defect cavity, a Q factor of 62,000 is achieved, accompanied with an improved η of 0.38 (assuming an objective lens with a numerical aperture of 0.65). A further increase of η to more than 0.60 is observed at the expense of slight degradation of Q factor (down to 50,000). We further experimentally confirm the increase of both Q and η, using micro-photoluminescence measurements, and demonstrate high Q factors up to 25,000: the highest value ever reported for dipole modes in H1 PhC nanocavities. © 2012 Optical Society of America.

We demonstrate a highly uniform, dense stack of In0.22Ga0.78As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dotto-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

We measured the second-order coherence at zero time delay, g(2)(0), of a high-Q photonic crystal nanocavity quantum dot laser below and above the lasing threshold, via detecting visible emission originated from the second harmonic generation (SHG) occurring within the laser cavity. The efficiency of the nonlinear frequency conversion process, defined by SHG intensity divided by the square of laser output intensity, is shown to be proportional to g(2)(0), and hence is used for the measurement. The obtained g(2)(0) values show good agreement with those measured by a Hanbury Brown-Twiss interferometer equipped with ultrafast superconducting single-photon detectors. © 2014 American Physical Society.

Self-frequency conversion (SFC), where both laser oscillation and nonlinear frequency conversion occurs in the same laser crystal, has been used to efficiently extend the operational wavelength of lasers. Downsizing of the cavity mode volume (V) and increasing the quality factor (Q) could lead to a more efficient conversion process, mediated by enhanced n-th order nonlinearities that generally scale as (Q/V)n. Here, we demonstrate nanocavity-based SFC by utilizing photonic crystal nanocavity quantum dot lasers. The high Q and small V supported in semiconductorbased nanocavities facilitate efficient SFC to generate visible light, even with only a few photons present in the laser cavity. The combined broadband quantum dot gain and small device footprint enables the monolithic integration of 26 different-color nanolasers (spanning 493-627 nm) within a micro-scale region. These nanolasers provide a new platform for studying few-photon nonlinear optics, and for realizing full-color lasers on a single semiconductor chip. ©2013 Optical Society of America.

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

We demonstrate self-frequency summing in photonic crystal nanocavity lasers with quantum dot gain. Two dipole modes and a hexapole mode, supported in the cavity, simultaneously showed lasing oscillation in the near infrared wavelength region under optical carrier injection. Meanwhile, within the same laser cavity, the internally generated three laser fields are up-converted to exhibit sharp visible emission lines via intra-cavity nonlinear frequency summing (and doubling) processes. This self-frequency summing process in active nanocavities will pave the way for developing nanoscale nonlinear optical light sources. © 2013 AIP Publishing LLC.

We report experimental progresses in cavity quantum electrodynamics using H1 and H0-type photonic crystal nanoacvities embedding single quantum dots. Strong coupling and enhanced optical Stark effect in these systems with large g/kwill be discussed.

We report experimental progresses in cavity quantum electrodynamics using H1 and H0-type photonic crystal nanoacvities embedding single quantum dots. Strong coupling and enhanced optical Stark effect in these systems with large g/KΚ will be discussed. © 2014 OSA.

We demonstrate highly circularly polarized emission from quantum dots in semiconductor chiral photonic crystals. The emission is influenced by the difference in density of states between the orthogonal circular polarizations at the polarization band edge.

We demonstrate highly circularly polarized emission from quantum dots in semiconductor chiral photonic crystals. The emission is influenced by the difference in density of states between the orthogonal circular polarizations at the polarization band edge. © OSA 2015.

We report the formation and optical properties of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition for application to single photon sources. InAs/GaAs QD-in-NWs with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μe V are observed. Light emission from the single QD-in-NW shows photon antibunching which evidences single photon emission from high-quality QD-in-NWs. © 2012 Materials Research Society.

We use scanning electron microscopy to precisely measure the locations of quantum dots buried in photonic crystal nanocavities. We show that well-positioned dots (at the field maximum) can exhibit vacuum Rabi splittings larger than 180μeV.

We report visible light generation via intra-cavity frequency doubling in photonic crystal nanocavity quantum dot lasers. A strong field enhancement in the nanocavity enables the efficient conversion process, even with only a few intra-cavity photons. © 2012 IEEE.

We demonstrate a large vacuum Rabi splitting in an H0 photonic crystal nanocavity-quantum dot system. The nanocavity with an ultra-small mode volume enabled us to observe the largest splitting ever reported using single InAsquantum dots. © 2013 IEEE.

We measured the second order coherence of a photonic crystal nanolaser through measuring frequency doubling occurring within the laser nanocavity. This method enables investigation of the intensity noise properties even far below the lasing threshold.

We measured the second order coherence of a photonic crystal nanolaser through measuring frequency doubling occurring within the laser nanocavity. This method enables investigation of the intensity noise properties even far below the lasing threshold. © 2014 OSA.