論文

Quantum-dot (QD) nanolasers integrated on a silicon photonic circuit are demonstrated for the first time. QD nanolasers based on one-dimensional photonic crystal nanocavities containing InAs/GaAs QDs are integrated on CMOS-processed silicon waveguides with silicon dioxide cladding. We employed transfer printing, whereby the three-dimensional stack of photonic nanostructures is assembled in a pick-and-place manner. The lasing operation and waveguide coupling of an assembled single nanolaser are confirmed through micro-photoluminescence spectroscopy. Furthermore, by repetitive transfer printing, two QD nanolasers integrated onto a single silicon waveguide are demonstrated, opening a path to the development of compact light sources potentially applicable to wavelength division multiplexing.

Photonic integrated circuits (PICs) are attractive platforms to perform large-scale quantum information processing. While highly functional PICs (e.g., silicon-based photonic circuits) and high-performance single-photon sources [SPSs, e.g., compound-semiconductor quantum dots (QDs)] have been independently demonstrated, their combination for single-photon-based applications has still been limited. This is largely due to the complexities of introducing SPSs into existing PIC platforms, which are generally realized with different materials and using distinct fabrication protocols. Here, we report a novel approach to combine SPSs and PICs prepared independently. We employ transfer printing, by which multiple desired SPSs can be integrated in a simple pick-and-place manner with a theoretical waveguide coupling efficiency >99%, fulfilling the demanding requirements of large-scale quantum applications. Experimentally, we demonstrated QD-based SPSs with high waveguide coupling efficiencies, together with the integration of two SPSs into a waveguide. Our approach will accelerate scalable fusion between modern PICs and cutting-edge quantum technologies.

We demonstrate two dimensional photonic crystal nanocavities embedding spatially-isolated active regions containing InAs/GaAs self-assembled quantum dots. We fabricated the GaAs-based structures by a combination of electron-beam lithography, dry/wet etching and crystal regrowth using molecular beam epitaxy. The fabricated nanocavity based on a photonic crystal double heterostructure supports a cavity mode with a high experimental quality factor over 10,000, despite the existence of a mound structure on the nanocavity formed during the regrowth. Using electromagnetic simulations, we discuss the origin of the cavity mode and a direction for further increasing the quality factor. The two dimensional photonic crystal nanocavities with buried quantum dot active regions will provide a useful platform for developing high performance nanolasers.

Topological photonics emerged as a novel route to engineer the flow of light. Topologically protected photonic edge modes, which are supported at the perimeters of topologically nontrivial insulating bulk structures, are of particular interest as they may enable low-loss optical waveguides immune to structural disorder. Very recently, there has been a sharp rise of interest in introducing gain materials into such topological photonic structures, primarily aiming at revolutionizing semiconductor lasers with the aid of physical mechanisms existing in topological physics. Examples of remarkable realizations are topological lasers with unidirectional light output under time-reversal symmetry breaking and topologically protected polariton and micro/nanocavity lasers. Moreover, the introduction of gain and loss provides a fascinating playground to explore novel topological phases, which are in close relevance to non-Hermitian and parity-time symmetric quantum physics and are, in general, difficult to access using fermionic condensed matter systems. Here, we review the cutting-edge research on active topological photonics, in which optical gain plays a pivotal role. We discuss recent realizations of topological lasers of various kinds, together with the underlying physics explaining the emergence of topological edge modes. In such demonstrations, the optical modes of the topological lasers are determined by the dielectric structures and support lasing oscillation with the help of optical gain. We also address recent research on topological photonic systems in which gain and loss, themselves, essentially influence topological properties of the bulk systems. We believe that active topological photonics provides powerful means to advance micro/nanophotonics systems for diverse applications and topological physics, itself, as well.

Among various solid-state systems, gate-defined quantum dots (QD) with high scalability and controllability for single electron spin qubits are promising candidates to realize quantum spin-photon interface. The efficiency of the spin-photon interface is expected to be significantly enhanced by optical coupling of gate-defined QDs with photonic crystal (PhC) nanocavities. As the first step towards this optical coupling, we designed and experimentally demonstrated a PhC nanocavity with electrodes. The electrodes, which can form a single QD, were introduced on the top surfaces of two-dimensional PhC nanocavities with a position accuracy of a few tens of nanometers. Despite the electrodes, a resonant mode was confirmed for the PhC nanocavities through micro-photoluminescence spectroscopy. This work marks a crucial step towards optical coupling between gate-defined QDs and PhC nanocavities.

We report a valley photonic crystal (VPhC) waveguide in a GaAs slab with InAs quantum dots (QDs) as an internal light source exploited for the experimental characterization of the waveguide. A topological interface state formed at the interface between two topologically-distinct VPhCs is used as the waveguide mode. We demonstrate robust propagation for the near-infrared light emitted from the QDs, even with the presence of sharp bends, due to the topological protection of the guided mode. Our work will be of importance for developing robust photonic integrated circuits with small footprints, as well as for exploring active semiconductor topological photonics.

Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.

Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs poses a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of the desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from dissimilar sources. Here, we demonstrate in situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.

In this work, we use photoluminescence (PL) spectroscopy to investigate how self-assembled GaSb/GaAs quantum dots (QDs) depend on their growth mechanism. Carrier transfer (i.e., carrier recombination in QDs and escape through the barrier layer) is investigated as a function of excitation-power- and temperature-dependent PL measurements. A drastic blueshift of the QD peak energy from 1.23 to 1.30 eV and a further shift to 1.33 eV reveal the influence of the GaSb growth rate and the growth temperature on the optical properties of these QDs. The thermal activation energy is extracted from the temperature-dependent PL by fitting the integrated PL intensity of the QD peaks to the Arrhenius relation. The QDs grown at the growth rate of 0.1 monolayers/s at 450 °C have higher thermal activation energy (109 meV) than those grown at a lower growth rate and higher QD growth temperature. The observed PL characteristics are discussed in terms of QD size, uniformity of QDs, and material intermixing occurring during QD growth on the buffer layer and capping layer.

Topological photonics has emerged as a novel approach to engineering the flow of light and provides unprecedented means for developing diverse photonic elements, including robust optical waveguides immune to structural imperfections. However, the development of nanoscale standing-wave cavities in topological photonics is rather slow, despite its importance when building densely integrated photonic integrated circuits. In this Letter, we report a photonic crystal nanocavity based on a topological corner state, supported at a 90-deg-angled rim of a twodimensional photonic crystal. A combination of the bulk-edge and edge-corner correspondences guarantees the presence of the higher-order topological state in a hierarchical manner. We experimentally observe a corner mode that is tightly localized in space while supporting a high Q factor over 2,000, verifying its promise as a nanocavity. These results cast new light on the way to introduce nanocavities in topological photonics platforms.

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs) because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.

Topological photonics provides a novel route for designing and realizing optical devices with unprecedented functionalities. Topological edge states, which are supported at the boundary of two photonic systems with different band topologies, enable robust light transport immune to structural imperfections and/or sharp bends in waveguides. Furthermore, the topological edge states are expected to revolutionize cavity-based optical devices such as lasers. Optical devices with built-in topological protection with a small footprint are fascinating as on-chip optical devices for low-loss and functional photonic integrated circuits. Semiconductor photonic crystals are promising platforms enabling the miniaturization of topological optical devices. Herein, we review the recent realizations of semiconductor topological photonic crystals. In particular, we discuss topological waveguides in valley photonic crystals, which have received increasing attention because of their simple realization. In addition, we provide recent demonstrations of topological nanocavities, which are another key component of topological nanophotonics. Progress in semiconductor topological photonic crystals will propel the use of topological photonic devices in various applications as well as deepen the understanding of topological photonic phenomena at the wavelength scale.

We report single plasmon generation with a self-assembled InAs/GaAs quantum dot embedded in a plasmonic microring resonator. The plasmonic cavity based on a GaAs microring is defined on an atomically smooth silver surface. We fabricated this structure with the help of transfer printing, which enables the pick-and-place assembly of the complicated, heterogeneous three-dimensional stack. We show that a high-order surface-plasmon-polariton transverse mode mediates efficient coupling between the InAs/GaAs quantum dots and the plasmonic cavity, paving the way for developing plasmonic quantum light sources based on the state-of-the-art solid-state quantum emitters. Experimentally, we observed Purcell-enhanced radiation from the quantum dot coupled to the plasmonic mode. We also observed a strong antibunching in the intensity correlation histogram measured for scattered photons from the plasmonic resonator, indicating single plasmon generation in the resonator. Our results are important for the development of quantum plasmonic circuits integrating high-performance single plasmon generators.

Valley photonic crystals (VPhCs) are an attractive platform for the implementation of topologically protected optical waveguides in photonic integrated circuits (PICs). The realization of slow light modes in the topological waveguides may lead to further miniaturization and functionalization of the PICs. In this Letter, we report an approach to realize topological slow light waveguides in semiconductor-slab-based VPhCs. We show that a bearded interface of two topologically distinct VPhCs can support topological kink modes with large group indices over 100 within the topological bandgap. We numerically demonstrate robust light propagation in the topological slow light waveguide with large group indices of ∼60, even under the presence of sharp bends. Our work opens a novel route to implement topological slow light waveguides in a way compatible with current PIC technology.

In this study, we examine a photonic wire waveguide embedded with an ensemble of quantum dots (QDs) that directionally emits into the waveguide depending on the spin state of the ensemble. The directional emission is facilitated by the spin-orbit interaction of light. The waveguide has a two-step stair-like cross section and QDs are embedded only in the upper step, such that the circular polarization of emission from the spin-polarized QDs controls the direction of the radiation. We numerically verify that more than 70% of the radiation from the ensemble emitter is toward a specific direction in the waveguide. We also examine a microdisk resonator with a stair-like edge, which supports selective coupling of the QD ensemble radiation into a whispering gallery mode that rotates unidirectionally. Our study provides a foundation for spin-dependent optoelectronic devices.

We demonstrate strong coupling between a single quantum dot (QD) and a GaAs-based L4/3-type photonic crystal nanocavity. The L4/3 cavity supports a high theoretical Q factor (∼8 106), a small mode volume [∼0.32 (λ/n)3], and an electric field distribution with the maximum electric field lying within the host dielectric material, which facilitates strong coupling with a QD. We fabricated L4/3 cavities and observed a high Q factor over 80 000 using photoluminescence measurement. We confirmed strong coupling between a single QD and an L4/3 cavity with a Q factor of 33 000 by observing a clear anti-crossing in the spectra.

A quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum-technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS) technology provides optical components useful for realizing large-scale QPICs. Optical nonlinearity at the single-photon level is required for QPICs to facilitate photon-photon interaction. However, to date, realization of optical elements with deterministic (i.e., not probabilistic) single-photon nonlinearity by use of silicon-based components is challenging despite the enhancement of the functionality of QPICs based on silicon photonics. In this study, we realize a strongly coupled InAs/GaAs quantum-dot-cavity-quantum-electrodynamics system on a CMOS-processed silicon photonic chip. The heterogeneous integration of the GaAs cavity on the silicon chip is performed by transfer printing. The cavity-quantum-electrodynamics system on the CMOS photonic chip realized in this work is a promising candidate for an on-chip single-photon nonlinear element, which constitutes the fundamental component for future applications based on QPICs, such as coherent manipulation and nondestructive measurement of qubit states via a cavity, and an efficient single-photon filter and router.

We report efficient quantum-dot single-photon sources with unidirectional output integrated on Si by transfer printing. The device was designed to be robust against misalignment accompanied by the hybrid integration. Efficient single-photon generation was experimentally Confirmed.

We report efficient quantum-dot single-photon sources with unidirectional output integrated on Si by transfer printing. The device was designed to be robust against misalignment accompanied by the hybrid integration. Efficient single-photon generation was experimentally confirmed.

We discuss a transfer printing method for on-silicon hybrid integration. This technique simplifies the integration process of III-V quantum dots in nanocavities on CMOS-processed circuits, enabling single photon sources and cavity QED systems on Si.