論文

We successfully fabricated photonic crystal nanocavities for generating entangled photon pairs using single quantum dots. The fabricated cavities have a minimum splitting between two orthogonal dipole modes of-250 ieV and measured cavity Qs of-2,000. A maximum fidelity of 0.95 for entangled photon pairs is expected with this cavity. © CLEO Pacific Rim 2007.

Our recent advances in solid-state cavity quantum electrodynamics and lasing oscillation in single quantum dot (QD)-photonic crystal (PhC) nanocavity coupled systems are discussed. These include the fabrication of high-quality 2-D PhC nanocavities $(Q 50 000)$, which enabled the generation of spontaneous two-photon emission from a single QD, and the realization of lasing oscillation with single QD gain in the strong coupling regime. Moreover, we have fabricated high-quality 3-D PhC nanocavities $(Q \sim 38 500)$, which have facilitated the realization of both lasing oscillation and the Purcell effect. Lasing oscillation in a 1-D PhC nanobeam cavity with gain produced by a few QDs has also been demonstrated. © 1995-2012 IEEE.

We investigate the recombination dynamics of positively charged and neutral biexcitons and excitons in a single InAs/GaAs quantum dot (QD) within a two-dimensional (2D) photonic bandgap (PBG). The 2D PBG makes the exciton lifetime four times longer and enhances photon-extraction efficiency compared to those without the PBG. Photon cross-correlation measurements demonstrate the cascade emissions of both charged and neutral biexcitonsexcitons from the same QD. In the charged case, a hole in the p-shell relaxes into the s-shell between the cascade, and the corresponding transition is confirmed based on the spin configuration. The long exciton lifetime with the PBG helps us to reveal the spin dynamics that did not clearly appear in intrinsic QDs. © 2009 Elsevier B.V. All rights reserved.

We report on the fabrication of a side-gate structure which enables a purely lateral electric field to be applied onto a self-assembled quantum dot. The lateral field produces an unconventional M'-shaped exciton energy shift-a blueshift followed by a redshift. The unconventional energy shift is reproduced by calculation. The calculation shows that only the positively charged exciton shows the unconventional shift. The origin is attributed to the field-induced hole-concentration in the bottom-corner of the dot, which strongly enhances the repulsive direct Coulomb interaction and reduces the exciton binding energy. © 2011 American Institute of Physics.

We have investigated effects of growth temperature of partial GaAs cap (Tcap) on InAs quantum dots (QDs) in indium-flush (In-flush) process with atomic force microscopy (AFM) and micro photoluminescence (μ-PL) measurements. Tcap in In-flush process are varied from 385 °C to 485 °C as an experimental parameter. In order to investigate the effects of Tcap on structural property of single InAs QD, shape of QD in initial capping process are characterized by AFM measurements in air at room temperature. While isotropic shape of QDs is kept in low Tcap conditions below about 440 °C, in-plane anisotropy of initial shape of QDs are increased with increasing of Tcap due to elongation to the [1̄0] direction. μ-PL measurements are performed at 7K for the investigation of the effects of Tcap on optical property in single InAs QDs. In low Tcap conditions from 410 °C to 435 °C, distinct emissions from excitonic states in single QDs are observed. In the same Tcap range, the AFM result shows that isotropic shape of QDs is kept. On the other hand, in high Tcap conditions above about 440 °C, indefinite peaks and broad emissions appear remarkably. Excitonic emissions which are observed in low Tcap range are hardly observed in this high Tcap range. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

We demonstrate simultaneous enhancement of photon emission and absorption of a single InGaAs self-assembled quantum dot (QD) in resonance with two modes in a photonic crystal nanocavity. The QD, whose ground and excited states are resonant, respectively, with the first and second lowest order cavity modes, is excited by cavity resonant excitation at the wavelength of the second order cavity mode and shows 180 times greater photon emission from the ground state than a bare QD. This large enhancement is attributed to a combination of Purcell effect, efficient photon extraction, and cavity resonant absorption enhancement. © 2008 American Institute of Physics.

We demonstrate efficient extraction of a single InAs quantum dot spontaneous emission through an air-suspended waveguide to which a photonic crystal nanobeam cavity is coupled. First, the quantum dot emission into the cavity mode is enhanced due to a high Purcell effect arising from a large quality factor and a small mode volume of the cavity mode. Second, the cavity photons can be efficiently transferred to the guided mode by optimizing the design of a structure that exhibits a high coupling rate between the two modes. This configuration has lead to the observation of a high extraction efficiency (79%) of the quantum dot emission through the waveguide. Moreover, as a result of the high extraction efficiency to the guided mode, the unwanted microphotoluminescence coupling to the free space modes and detected from the top surface of the sample is strongly suppressed. Indeed, we show that it exhibits a negative peak as a function of the detuning between the cavity mode energy and the quantum dot transition energy. © 2012 American Physical Society.

We experimentally investigated the excitation power dependence of a strongly coupled quantum dot (QD)-photonic crystal nanocavity system by photoluminescence measurements. At a low excitation power regime, we observed a vacuum Rabi doublet emission at the QD- cavity resonance condition. With increasing excitation power, in addition to the doublet, a third emission peak appeared. This observed spectral change is unexpected from conventional atomic cavity quantum electrodynamics. The observations can be attributed to featured pumping processes in the semiconductor QD-cavity system. © 2009 The Japan Society of Applied Physics.

We report on the observation of the strong-coupling regime in a single InGaAs self-assembled quantum dot (QD) and photonic crystal nanocavity system. There was a strong Interaction between the QD exciton and dlscretlzed photon mode and the strong coupling was manifest in photoluminescence data, which displayed a distinct anti-crossing in temperature tuning measurements. A vacuum Rabi splitting of 180μeV was observed, which was larger than the values given in previous studies with clear exciton polariton modes. In addition, the exciton-photon coupling strength amounted to about 90μeV. A distinct energy mixing, which resulted from the reversible photon emission process of a QD, was also observed when the system formed a QD exciton polariton state. © 2008 The Japan Society of Applied Physics.

The strong coupling of photons and matter 1 in semiconductor nanocavities has been a test bed for cavity quantum electrodynamics 2,3 (QED). Vacuum Rabi oscillation 4-8 -the coherent exchange of a single quantum between a single quantum dot (SQD) and an optical cavityand highly efficient cavity-QED lasers 9-19 have both been reported. The coexistence of vacuum Rabi oscillation and laser oscillation seems to be contradictory, but it has recently been predicted theoretically that the strong-coupling effect could be sustained in laser oscillation 20 . Here, we demonstrate the onset of lasing in the strong-coupling regime in an SQD-cavity system. A high-quality semiconductor optical nanocavity and strong SQD-field coupling enabled the onset of lasing while maintaining the fragile coherent exchange of quanta. © 2010 Macmillan Publishers Limited. All rights reserved.

Positively charged excitonic state in single InAs quantum dot (QD) has been neutralized by Si delta doping and the optical properties of the fabricated samples are characterized by micro-photoluminescence measurements (μ-PL) at low temperature. An InAs QD sample having dominant emissions from positively charged excitonic states is prepared for a reference. By optimizing Si delta doping conditions, positively charged QDs are neutralized successfully and distinctive emissions from neutral exciton and biexciton from single QDs are achieved. For excessive doping condition, μ-PL spectra show optical degradation of lowering of peak intensity and broadening of peak width as doping concentration increases. © 2010 IOP Publishing Ltd.

We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485°C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423°C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources. © 2010 Elsevier B.V. All rights reserved.

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain and its unique photon statistics. Gain tuning measurements and photon correlation measurements indicated that a single quantum dot plays a substantial role in the laser oscillation. Photon correlation measurements showed a distinct transition from anti-bunching to Poissonian via photon bunching around the threshold with the increase of the excitation power. Numerical simulations, including contributions of other light sources besides a single quantum dot, indicated that the photon bunching feature around the threshold can be enhanced by the interfusion of incoherent photons into the cavity mode. © 2009 Elsevier B.V. All rights reserved.

We report the optical properties of site-controlled InGaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) grown by selective metalorganic chemical vapor deposition (MOCVD). InGaAs/GaAs QD-in-NWs with various QD heights and In compositions are realized on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures, and identified by structural analyses using scanning transmission electron microscopy, photoluminescence (PL) characterization, and numerical analyses of the band structure using a single-band effective mass approximation. Room temperature (RT) light emission is observed at 1.03 μm from InGaAs/GaAs QD-in-NWs which is indicative of the formation of high-quality InGaAs QD-in-NWs. Sharp emission peaks from exciton and biexciton of single In(Ga)As QD-in-NWs are observed by using μ-PL characterization at 10 K. © 2012 The Japan Society of Applied Physics.

We demonstrate optically pumped continuous-wave photonic band-edge microlasers on a two-dimensional photonic crystal slab. Lasing was observed at a photonic band-edge, where the group velocity was significantly small near the K point of the band structure having a triangular lattice. Lasing was achieved by using a quantum dot gain material, which resulted in a significant decrease in the laser threshold, compared with photonic band-edge lasers using quantum well gain material. Extremely low laser thresholds of ∼80 nW at 6 K was achieved. Lasing was observed in a defect-free photonic crystal as small as ∼7 m square. © 2009 Optical Society of America.

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample (1.5 x 108 cm-2) is used so that a single quantum dot can be isolated from the surrounding quantum dots. Laser oscillation begins at a pump power of 42 nW under resonant condition, while the far-detuning conditions require ∼145 nW for lasing. This spectral detuning dependence of laser threshold indicates substantial contribution of the single quantum dot to the total gain. Moreover, photon correlation measurements show a distinct transition from anti-bunching to Poissonian via bunching with the increase of the excitation power, which is also an evidence of laser oscillation using the single quantum dot gain. © 2009 Optical Society of America.

An optical refraction prism consisting of metal and dielectric, subwavelength, periodic multilayered thin films has been proposed. The multilayered structure of metal and dielectric thin films has a cylindrical dispersion surface for TM polarized light. The light behaviors are very different from those of conventional glass prisms and photonic crystal superprisms. Refraction and diffraction of the light wave for the metal-dielectric multilayered prism has been investigated by numerical simulations and graphical representation based on the dispersion surface. A prism with 0.2 μm period had an angular dispersion of 0.20̊/nm for ̃0.8 μm wavelength light. The finite thick metal-dielectric multilayered structure acted as a slab waveguide. © 2008 Optical Society of America.

We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs. © 2012 American Institute of Physics.

We measure photon cross-correlation between two positively charged biexcitonic emission lines and a positively charged excitonic line for a single InAs/GaAs quantum dot (QD). Marked difference in the correlation function is observed, which originates from multiple spin configurations of intermediate states, i.e., excited positively charged exciton (trion) states. With the aid of a rate equation simulation, we evaluate the transition rate with p -shell hole-spin flip to be 0.8-1.0 GHz, which is almost comparable to the radiative decay rate of the ground charged exciton, presumably due to the spin scattering between carriers in a QD and a wetting layer and/or mixing of the excited trion states. In contrast, the relaxation rate with conserving p -shell hole-spin projection is estimated to be about one order of magnitude higher than that with hole-spin flip. © 2010 The American Physical Society.

Spontaneous two-photon emission from a solid-state single quantum emitter is observed. We investigated photoluminescence from the neutral biexciton in a single semiconductor quantum dot coupled with a high Q photonic crystal nanocavity. When the cavity is resonant to the half energy of the biexciton, the strong vacuum field in the cavity inspires the biexciton to simultaneously emit two photons into the mode, resulting in clear emission enhancement of the mode. Meanwhile, the suppression of other single photon emission from the biexciton was observed, as the two-photon emission process becomes faster than the others at the resonance. © 2011 American Physical Society.