Published papers
Ishikuro, Hiroki
121-140 items (total 143)
Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs
- Author
- H. Majima, H. Ishikuro, and T. Hiramoto
- Publication Title
- Magazine name IEEE Electron Devices Letters Volume 21(Issue 8) Start Page 396 - 398 (Publication Date）2000/08）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Impact of the Device Scaling on the Low-Frequency Noise in n-MOSFETs
- Author
- H. M. Bu, Y. Shi, X. L. Yuan, Y. D. Zheng, S. H. Gu, H. Majima, H. Ishikuro, and T. Hiramoto
- Publication Title
- Magazine name Applied Physics A Volume A71(Issue 2) Start Page 133 - 136 (Publication Date）2000/06）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels
- Author
- H. M. Bu, Y. Shi, X. L. Yuan, J. Wu, S. L. Gu, and Y. D. Zheng, H. Majima, H. Ishikuro, and T. Hiramoto
- Publication Title
- Magazine name Applied Physics Letters Volume 76(Issue 22) Start Page 3259 - 3261 (Publication Date）2000/05）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Control of Coulomb blockade oscillations in silicon single electron transistor using silicon nano-crystal floating gates
- Author
- Nobuyoshi Takahashi, Hiroki Ishikuro, and Toshiro Hiramoto
- Publication Title
- Magazine name Applied Physics Letters Volume 76(Issue 2) Start Page 209 - 211 (Publication Date）2000/01）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Quantum Energy and Charging Energy in Point Contact MOSFETs acting as Single Electron Transistors
- Author
- Toshiro Hiramoto and Hiroki Ishikuro
- Publication Title
- Magazine name Superlattices and Microstructures Volume 24(Issue 1-2) Start Page 263 - 267 (Publication Date）1999）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Characteristic Distributions of Narrow Channel Metal-Oxide-Semiconductor Field-Effect-Transistor Memories with Silicon Nanocrystal Floating Gates
- Author
- Eiji Nagata, Nobuyoshi Takahashi, Yuri Yasuda, Takashi Inukai, Hiroki Ishikuro, and Toshiro Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 38(Issue 12B) Start Page 7230 - 7232 (Publication Date）1999/12）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Highly Integrated Single Electron Devices and Giga-bit Lithography
- Author
- Toshiro Hiramoto, H. Ishikuro, and H. Majima
- Publication Title
- Magazine name Journal of Photopolymer Science and Technology Volume 12(Issue 3) Start Page 417 - 422 (Publication Date）1999/06）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Coulomb Blockade in VLSI-Compatible Multiple-Dot and Single-Dot MOSFETs
- Author
- Toshiro Hiramoto and Hiroki Ishikuro
- Publication Title
- Magazine name International Journal of Electronics Volume 86(Issue 5) Start Page 591 - 603 (Publication Date）1999/05）
- Authorship Category
- Single Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
- Author
- Yi Shi, Kenichi Saito, Hiroki Ishikuro, and Toshiro Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 38(Issue 4B) Start Page 2453 - 2456 (Publication Date）1999/04）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs
- Author
- Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Takuya Saraya, Makoto Takamiya, and Toshiro Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 38(Issue 4B) Start Page 2496 - 2500 (Publication Date）1999/04）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
On the origin of tunneling barriers in silicon single electron and single hole transistors
- Author
- H. Ishikuro and T. Hiramoto
- Publication Title
- Magazine name Applied Physics Letters Volume 74(Issue 8) Start Page 1126 - 1128 (Publication Date）1999/02）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
- Author
- Yi Shi, Kenichi Saito, Hiroki Ishikuro, and Toshiro Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 38(Issue 1B) Start Page 425 - 428 (Publication Date）1999/01）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule
- Author
- Hiroki Ishikuro and Toshiro Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 38(Issue 1B) Start Page 396-398 (Publication Date）1999/01）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals
- Author
- Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto
- Publication Title
- Magazine name Journal of Applied Physics Volume 84(Issue 4) Start Page 2358-2360 (Publication Date）1998/08）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Hopping Transport in Multiple-Dot Silicon Single Electron MOSFET, Solid State Electronics
- Author
- H. Ishikuro and T. Hiramoto
- Publication Title
- Magazine name Solid State Electronics Volume 42(Issue 7-8) Start Page 1425 - 1428 (Publication Date）1998/07）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Suppression of Geometric Component of Charge Pumping Current in Thin Film SOI MOSFET
- Author
- N. Duyet, H. Ishikuro, M. Takamiya, T. Saraya, and T. Hiramoto
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 37(Issue 7B) Start Page L855 - L858 (Publication Date）1998/07）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Fabrication of Gate-All Around MOSFET by Silicon Anisotropic Etching Technique
- Author
- T. Mukaiyama, K. Saito, H. Ishikuro, M. Takamiya, T. Saraya, and T. Hiramoto
- Publication Title
- Magazine name Solid State Electronics Volume 42(Issue 7-8) Start Page 1623 - 1626 (Publication Date）1998/06）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Quantum mechanical effects in the silicon quantum dot in a single-electron-transistor
- Author
- Hiroki Ishikuro and Toshiro Hiramoto
- Publication Title
- Magazine name Applied Physics Letters Volume 71(Issue 25) Start Page 3691 - 3693 (Publication Date）1997/12）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET
- Author
- T. Hiramoto, H. Ishikuro, T. Fujii, G. Hashiguchi, and T. Ikoma
- Publication Title
- Magazine name Japanese Journal of Applied Physics Volume 36(Issue 6B) Start Page 4139 - 4142 (Publication Date）1997/06）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates
- Author
- T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, and T. Ikoma
- Publication Title
- Magazine name Physics B Start Page 95 - 97 (Publication Date）1996）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With