Published papers
Matsumoto, Satoru
1-20 items (total 143)
Comparison of Boron Diffusion in Silicon during Shallow p+/n Formation by Non-Melt Excimer and Green Laser Annealing
- Author
- S.R.Aid, S.Matsumoto, G. Fuse and S. Sakuragi
- Publication Title
- Magazine name Phys. Status Solidi (a) Volume 208(Issue 12) Start Page 1002 (Publication Date）2011）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- With
Boron Diffusion in Silicon during Shallow p+/n Junction Formation by Non-Melet Excimer Laser Annealing
- Author
- 松本 智
- Publication Title
- Magazine name Phys. Status. Solidi Volume 208(Issue 7) Start Page 1646-1651 (Publication Date）2011/07）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Quantitative Estimation of strained Si/SiGe Heterostructure using C-V チャラcて李s知cs雄fstら稲dSi MOS capactor
- Author
- M. Inagaki, MATSUMOTO SATORU
- Publication Title
- Magazine name ECS Transactions Volume 25(Issue 3) Start Page 179-185 (Publication Date）2009/03）
- Authorship Category
- Single Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Diffusion of Arsenic through strained Si/relaxed SiGe heterostructures
- Author
- T. Sumitomo, MATSUMOTO SATORU
- Publication Title
- Magazine name J. Electrochem. Soc Volume 155(Issue 4) Start Page H210-H212 (Publication Date）2008/04）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Cathodeluminescence investigation of relaxed layer and composition graded SiGe layer
- Author
- T. Sumitomo, MATSUMOTO SATORU
- Publication Title
- Magazine name Jpn. J. Appl. Phys. Volume 46(Issue 11) Start Page 1463-1465 (Publication Date）2007/11）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescence
- Author
- T. Sumitomo, MATSUMOTO SATORU
- Publication Title
- Magazine name Materials Science in Semiconductor Processing Volume 9(Issue 6) Start Page 794-797 (Publication Date）2006/06）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Single Electron Transistor fabricated with SOI wafer
- Author
- S. Kobayashi, MATSUMOTO SATORU
- Publication Title
- Magazine name Material Science and Engineering Volume C26(Issue 1) Start Page 889-892 (Publication Date）2006/01）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Determination of Silicon self-interstitial diffusivity using isotopically pure 30Si multi-layer
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Materials Science and Engineering Start Page 334-338 (Publication Date）2004）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Si self-diffusivity using isotopically pure 30Si epitaxial layers
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Materials Science and Engineering Start Page 330-333 (Publication Date）2004）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Self-diffusion in intrinsic and extrinsic silicon using isotopically pure 30Si/natural Si heterostructures
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Jpn. J. Appl. Phys. Start Page 3304-3310 (Publication Date）2003）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Type and charge state of point defects in heavily As-- and B-doped Si
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Materials Science in Semiconductor Processing Start Page 15-19 (Publication Date）2003）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Growth of GaN on Si substrate-role of BP thin layer
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Optical Materials Start Page 223-228 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Growth of GaN on Si(100) substrate using BP as a buffer layer
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Materials and Science Engineering Start Page 135-138 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Variation of Si melt viscosity with boron addition
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Journal of Crystal Growth Start Page 1667-1670 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Formation Ge quantum dots on boron-reconstructed surface/Si(111)
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Materials Science and Engineering Start Page 188-190 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Effect of Nitrogen segregation on TED and loss of phosphorus in CZ Si
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Nuclear Instruments and Methods in Physics Research Start Page 313-317 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Effect of Vacancy double acceptor level on Si self-diffusion under heavy doping condition
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Electrochemcal Society Proc. Start Page 248-253 (Publication Date）2002）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Initial Growth of titanium germanosilicide on Ge/Si(111)
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Applied Surface Science Start Page 90-95 (Publication Date）2001）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
Self-diffusion in Extrinsic Silicon Using Enriched 30Si
- Author
- MATSUMOTO SATORU
- Publication Title
- Magazine name Jpn. J. Appl. Phys. Volume 40(Issue 11) Start Page 1131-1140 (Publication Date）2001/11）
- Authorship Category
- Joint Work
- Publication Category
- Research paper (scientific journal)
- Peer-review Status
- Without
“The effect of elevated silicon substrate temperature on TiSi2 formation from a Ti film”, -247.
- Author
- K. Ezoe, T. Yamamoto, K. Ishii and S. Matsumoto
- Publication Title
- Magazine name Thin Solid Films, 369(2000)244 (Publication Date）2000）
- Authorship Category
- Joint Work
- Peer-review Status
- Without