Published papers

The effect of preadsorbed oxygen on the subsequent adsorption and reactions of water on Ru(0001) has been studied using low temperature scanning tunneling microscopy and DFT calculations. Experiments were carried out for O coverages close to 0.25 ML. It was found that no dissociation of water takes place up to the desorption temperature of #180-230 K. DFT calculations show that intact water on O(2 × 2)/Ru(0001) is #0.49 eV more stable than the dissociation products, H and OH, at their preferred fee and top adsorption sites.

Using density-functional theory we found that, depending on coverage, coadsorbed oxygen can act both as a promoter and as an inhibitor of the dissociation of water on Ru(0001), the transition between these two behaviors occurring at ∼0.2 ML. The key factor that determines this transition is the adsorption energy of the reaction products, OH in particular. The chemistry of this coadsorbed system is dictated by the effective coordination of the Ru atoms that participate in the bonding of the different species. In particular, we observed that a low coverage of oxygen increases the adsorption energy of the OH fraction on the Ru surface. This surprising extra stabilization of the OH with the coadsorption of oxygen can be understood in the context of the metallic bonding and could well correspond to a general trend for the coadsorption of electronegative species on metallic surfaces.

We discuss the role of the presence of dangling H-bonds from water or from surface hydroxyl species on the wetting behavior of surfaces. Using scanning tunneling and atomic force microscopies and photoelectron spectroscopy, we have examined a variety of surfaces, including mica, oxides and pure metals. We find that in all cases, the availability of free, dangling H-bonds at the surface is crucial for the subsequent growth of wetting water films. In the case of mica, electrostatic forces and H-bonding to surface O atoms determine the water orientation in the first layer and also in subsequent layers with a strong influence in its wetting characteristics. In the case of oxides like TiO2, Cu2O, SiO2 and Al2O3, surface hydroxyls form readily on defects upon exposure to water vapor and help nucleate the subsequent growth of molecular water films. On pure metals, such as Pt, Pd and Ru, the structure of the first water layer and whether or not it exhibits dangling H-bonds is again crucial. Dangling H-bonds are provided by molecules with their plane oriented vertically, or by OH groups formed by the partial dissociation of water. By tying the two H atoms of the water molecules into strong H-bonds with pre-adsorbed O on Ru can also quench the wettability of the surface.

Tunneling electrons in a scanning tunneling microscope were used to excite specific vibrational quantum states of adsorbed water and hydroxyl molecules on a Ru(0 0 0 1) surface. The excited molecules relaxed by transfer of energy to lower energy modes, resulting in diffusion, dissociation, desorption, and surface-tip transfer processes. Diffusion of H2O molecules could be induced by excitation of the O–H stretch vibration mode at 445 meV. Isolated molecules required excitation of one single quantum while molecules bonded to a C atom required at least two quanta. Dissociation of single H2O molecules into H and OH required electron energies of 1 eV or higher while dissociation of OH required at least 2 eV electrons. In contrast, water molecules forming part of a cluster could be dissociated with electron energies of 0.5 eV.

The physical and electrochemical properties of boron-doped polycrystalline diamond electrodes, prepared with various B/C ratio, i.e., 0.1%, 0.5% (BDD-A), 1% (BDD-B), and 5% (BDD-C), were investigated. Electrochemical measurements of the heavily boron-doped films (BDD-C) showed giant electric double-layer capacitance and activity which is significantly larger than BDD-A and BDD-B as well as glassy carbon electrodes. However, interestingly, actual boron concentration of BDD-C was observed to be almost the same as that of BDD-B by secondary ion mass spectroscopy (SIMS) and glow discharge optical emission spectroscopy (GDOES) analysis. It is suggested that the large capacitance is due to a few sp2-bonded carbon impurities, which was observed only in BDD-C, although the amount of the sp2-bonded nondiamond species are very small. In the present work, the reason for the interesting electrochemical properties of heavily boron-doped diamond electrodes is discussed. Furthermore, dimensional stability of the electrodes was also confirmed by conducting harsh anodic treatment.

The understanding and control of the buried interface between functional materials in optoelectronic devices is key to improving device performance. We combined atomic resolution scanning probe microscopy with first-principles calculations to characterize the technologically relevant organic/inorganic interface structure between pentacene molecules and the TiO 2 anatase (101) surface. A multipass atomic force microscopy imaging technique overcomes the technical challenge of imaging simultaneously the corrugated anatase substrate, molecular adsorbates, monolayers, and bilayers at the same level of detail. Submolecular resolution images revealed the orientation of the adsorbates with respect to the substrate and allowed direct insights into interface formation. Pentacene molecules were found to physisorb parallel to the anatase substrate in the first contact layer, passivating the surface and promoting bulk-like growth in further organic layers. While molecular electronic states were not significantly hybridized by the substrate, simulations predicted localized pathways for molecule-surface charge injection. The localized states were associated with the molecular lowest unoccupied molecular orbital inside the oxide conduction band, pointing to efficient transfer of photo-induced electron charge carriers across this interface in prospective photovoltaic devices. In uncovering the atomic arrangement and favorable electronic properties of the pentacene/anatase interface, our findings testify to the maturity and analytic power of our methodology in further studies of organic/inorganic interfaces.

Elucidation of the energy-level alignment mechanism at a molecule/insulator/metal interface is a key to understanding the molecular and interfacial phenomena. Herein, we provide a detailed investigation into the electronic structures of a free-base phthalocyanine on NaCl films of various thicknesses using scanning tunneling microscopy/spectroscopy (STM/STS). The energy of the ionization and the affinity levels of the molecule were deduced from the STS spectra, and we determined their dependence on the NaCl-film thickness, which can be explained based on three effects: a voltage drop within the NaCl films, the degree of electric-field screening around the molecule, and a variation in the work function of the substrates. We further found that the energy levels relative to the vacuum level are independent of the work function of the substrate, and that the size of the energy gap increases with the thickness. Our results suggest that it is possible to predict the energy levels at the interfaces based on the energy levels of the molecules in a gas phase, the work function of the substrate, and the thickness of the insulating films.

© 2019 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim Chemical transformation of 9-azidophenanthrene on the Ag(111) surface was studied by nc-AFM in UHV. High-resolution imaging supported by first-principle calculations revealed the structure of the final products that originated from a common and elusive 9-phenanthryl nitrenoid intermediate chemisorbed on the Ag(111) surface. A formal nitrene insertion into the C−H bond along with its dimerisation and hydrogenation were identified as main reaction channels. Thus, the ability of aryl azides to form covalent σ- and π-bonds between their transformation products on a solid surface was demonstrated at a single-molecule level.