Keio University

Presentations

Ishikuro, Hiroki

61-77 items (total 77)

Random Telegraph Signals in Very Narrow Channel MOSFET

Speaker
Y. Shi, H. M. Bu, X. L. Yuan, Y. D. Zheng, H. Ishikuro, H. Majima, and T. Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1999 Silicon Nanoelectronics Workshop(Venue Kyoto, Japan) Dates 1999.06 - 1999.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Threshold Voltage Shift in Ultra-Narrow MOSFETs by Quantum Mechanical Narrow Channel Effect

Speaker
H. Majima, H. Ishikuro, and T. Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1999 Silicon Nanoelectronics Workshop(Venue Kyoto, Japan) Dates 1999.06 - 1999.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Influence of Quantum Confinement Effects on Single Electron and Single Hole Transistors

Speaker
Hiroki Ishikuro and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 IEEE International Electron Devices Meeting (IEDM)(Venue San Francisco, USA) Dates 1998.12 - 1998.12
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Effects of Body Reverse Pulse Bias on Geometric Component of Charge Pumping Current in FD SOI MOSFETs

Speaker
Tran Ngoc Duyet, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 IEEE International SOI Conference,(Venue Florida, USA) Dates 1998.10 - 1998.10
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Measurement of Energetic and Lateral Distribution of Interface State Density in FD SOI MOSFETs

Speaker
Tran Ngoc Duyet, Hiroki Ishikuro, Yi Shi, Takuya Saraya, Makoto Takamiya, and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 International Conference on Solid State Devices and Materials (SSDM'98)(Venue Hiroshima, Japan) Dates 1998.09 - 1998.09
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals

Speaker
Yi Shi, Kenichi Saito, Hiroki Ishikuro, and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 International Conference on Solid State Devices and Materials (SSDM'98)(Venue International Conference Center Hiroshima) Dates 1998.09 - 1998.09
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

The Origin of Tunnel Barrier in Silicon Single Electron Transistor", International Conference on Physics of Semiconductors (ICPS)

Speaker
Hiroki Ishikuro and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title International Conference on Physics of Semiconductors (ICPS)(Venue Jerusalem, Israel) Dates 1998.08 - 1998.08
Presentation Format
International presentation
Language of Publication
English
Conference Category
Poster presentation

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based MOS Diodes

Speaker
Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures(Venue Sapporo, Japan) Dates 1998.06 - 1998.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Fabrication of Nano-Scale Point Contact MOSFETs Using Micrometer-Scale Design Rule

Speaker
H. Ishikuro and T. Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures(Venue Sapporo, Japan) Dates 1998.06 - 1998.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Narrow Channel MOS Memory Based on Silicon Nano-Crystals

Speaker
K. Saito, Y. Shi, H. Ishikuro, and T. Hiramoto
Conference Title
[Conference Category International presentation] Conference Title 1998 IEEE Silicon Nanoelectronics Workshop(Venue Hawaii, USA) Dates 1998.06 - 1998.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Energy Spectrum of the Quantum-Dot in a Si Single-Electron-Device

Speaker
Hiroki Ishikuro and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title IEEE 55th Annual Device Research Conference(Venue Colorado, USA) Dates 1998.06 - 1998.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Fabrication of Si Point Contact MOSFETs Acting as Single Electron Transistors at Room Temperature

Speaker
Hiroki Ishikuro and Toshiro Hiramoto
Conference Title
[Conference Category International presentation] Conference Title Silicon Nanoelectronics Workshop(Venue Kyoto, Japan) Dates 1997.06 - 1997.06
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel MOSFET

Speaker
T. Hiramoto, H. Ishikuro, T. Fujii, G. Hashiguchi, and T. Ikoma
Conference Title
[Conference Category International presentation] Conference Title 1996 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures(Venue Sapporo, Japan) Dates 1996.11 - 1996.11
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Floating Body Effects in 0.15 μm Partially Depleted SOI MOSFETs below 1 V

Speaker
T. Saraya, M. Takamiya, T. N. Duyet, T. Tanaka, H. Ishikuro, T. Hiramoto, and T. Ikoma
Conference Title
[Conference Category International presentation] Conference Title IEEE International SOI Conference(Venue Florida, USA) Dates 1996.10 - 1996.10
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Fabrication of Si Nano-Structures by Anisotropic Etching for Single Electron Device Applications

Speaker
T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, and T. Ikoma
Conference Title
[Conference Category International presentation] Conference Title 9th International MicroProcess Conference(Venue Fukuoka, Japan) Dates 1996.07 - 1996.07
Presentation Format
International presentation
Language of Publication
English
Conference Category
Oral presentation (general)

Coulomb Blockade in a Weakly Coupled Multiple-Dot-Channel MOSFET

Speaker
H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma
Conference Title
[Conference Category International presentation] Conference Title International Conference on Physics of Semiconductors(ICPS)(Venue Berlin, Germany) Dates 1996.07 - 1996.07
Presentation Format
International presentation
Language of Publication
English
Conference Category
Poster presentation

Extremely Large Amplitude of Random Telegram Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures

Speaker
H. Ishikuro, T. Saraya, T. Hiramoto, and T. Ikoma
Conference Title
[Conference Category International presentation] Conference Title International Conference on Solid State Devices and Materials (SSDM)(Venue Osaka, Japan) Dates 1995.08 - 1995.08
Presentation Format
International presentation
Language of Publication
English
Conference Category
Poster presentation