Keio University

Discovery of Energy Resonance Phenomenon at Nano-Semiconductor Interface—Anticipating Applications in Semiconductor Devices Using Heterostructures of Different Dimensions—

Publish: December 15, 2023
Public Relations Office

2023/12/15

RIKEN

University of Tsukuba

The University of Tokyo

Keio University

A joint research group, including Fang-Hsuan King, a former SPDR fellow (now a visiting researcher) at the Kato Nano-Quantum Photonics Laboratory in the RIKEN Cluster for Pioneering Research; Yuichiro K. Kato, a principal investigator (Team Leader of the Quantum Optoelectronics Research Team at the RIKEN Center for Advanced Photonics); Professor Susumu Okada of the Nanostructure Physics Laboratory in the Faculty of Pure and Applied Sciences at the University of Tsukuba; Professor Kousuke Nagashio of the Department of Materials Engineering, School of Engineering at The University of Tokyo; and Assistant Professor Shun Fujii of the Department of Physics, Faculty of Science and Technology at Keio University, has discovered a phenomenon where exciton transfer is enhanced by band energy resonance at the interface between nano-semiconductors with different dimensionalities (one-dimensional and two-dimensional).

These research findings are expected to contribute to applications in semiconductor devices composed of nanomaterials with atomically well-defined structures.

To create efficient semiconductors, device miniaturization is necessary, but this is approaching physical limitations. Low-dimensional semiconductors are gaining attention as a way to overcome this challenge. In this study, the joint research group fabricated a heterostructure of different dimensions using one-dimensional carbon nanotubes and two-dimensional tungsten diselenide, and investigated its optical absorption and emission properties. By using single-walled carbon nanotubes with various geometric structures to systematically vary the band energy, they revealed that energy resonance enhances exciton transfer. This is a significant result, demonstrating the potential applicability of band engineering—a useful concept in semiconductor engineering—to atomic layer devices.

This research was published in the online edition of the scientific journal "Nature Communications" on December 9.

Please see below for the full press release.

Press Release (PDF)