2018/04/05
National Institutes for Quantum and Radiological Science and Technology
National Institute for Materials Science
University of Tsukuba
Keio University
Key Points
Successfully controlled the spin orientation of graphene using an insulating magnetic material that does not conduct electricity.
The development of technology to control spin polarization marks a step forward toward realizing high-speed, energy-efficient "spin transistors" using "graphene" circuits.
Senior Researcher Seiji Sakai of the Quantum Beam Science Center, National Institutes for Quantum and Radiological Science and Technology (President: Toshio Hirano); NIMS Special Researcher Yasushi Yamauchi of the Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (President: Kazuhito Hashimoto); Lecturer Yoichi Yamada of the Faculty of Pure and Applied Sciences, University of Tsukuba (President: Kyosuke Nagata); and Associate Professor Kazuya Ando of the Faculty of Science and Technology, Keio University (President: Akira Haseyama) have successfully developed a new technology to control the orientation of electron spins, which is essential for the realization of spin transistors using graphene circuits. This achievement paves the way for the development of spintronics, which could solve the problems of performance limitations and power consumption faced by modern electronics.
For spintronics to evolve into a leading next-generation information technology, the realization of spin transistors, which play a central role in computing devices, is key. Graphene is attracting attention for its application in spin transistors as a conductive material capable of maintaining spin orientation over long distances. By using graphene in spin transistors, it is expected that high-speed, low-energy-consumption spin transistors suitable for application in computing devices can be realized. However, a key challenge in constructing spin transistors with graphene circuits has been the development of a technology to polarize the spin orientation of electrons flowing through the graphene. The research team has now succeeded in developing a new technology that controls the spin orientation within graphene using a magnetic insulator that does not conduct electricity. This marks a step forward toward the realization of spin transistors.
This achievement is expected to lead to the realization of information and communication devices that enrich our lives, such as mobile terminals that require no charging and a significant reduction in power consumption by information equipment.
This research will be published in the online edition of the journal Advanced Functional Materials on April 4, 2018.
For the full press release, please see below.